MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 168-6296
Mfr. Part No.IRFU024NPBF
BrandInfineon
MYR3.048
Each (In a Tube of 75)
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N 17 A 55 V 75 mΩ IPAK (TO-251) Through Hole 3 -20 V, +20 V Enhancement 4V 2V 45 W Single 1
RS Stock No. 913-3819
Mfr. Part No.IRF3708PBF
BrandInfineon
MYR5.28
Each (In a Tube of 50)
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N 62 A 30 V 12 mΩ TO-220AB Through Hole 3 -12 V, +12 V Enhancement 2V 0.6V 87 W Single 1
RS Stock No. 165-4217
Mfr. Part No.VN2222LL-G
BrandMicrochip
MYR1.224
Each (In a Bag of 1000)
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N 230 mA 60 V 7.5 Ω TO-92 Through Hole 3 -30 V, +30 V Enhancement 2.5V - 1 W Single 1
RS Stock No. 540-9991
Mfr. Part No.IRL3705NPBF
BrandInfineon
MYR6.24
Each
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N 89 A 55 V 10 mΩ TO-220AB Through Hole 3 -16 V, +16 V Enhancement 2V 1V 170 W Single 1
RS Stock No. 169-7208
Mfr. Part No.PSMN5R6-100PS,127
BrandNexperia
MYR5.46
Each (On a Reel of 1000)
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N 100 A 100 V 5.6 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 306 W Single 1
RS Stock No. 896-2381
Mfr. Part No.TK42A12N1,S4X(S
BrandToshiba
MYR3.782
Each (In a Pack of 5)
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N 42 A 120 V 9.4 mΩ TO-220SIS Through Hole 3 -20 V, +20 V Enhancement 4V - 35 W Single 1
RS Stock No. 919-4924
Mfr. Part No.IRF5305PBF
BrandInfineon
MYR3.557
Each (In a Tube of 50)
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P 31 A 55 V 60 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 110 W Single 1
RS Stock No. 145-4398
Mfr. Part No.FQA44N30
MYR19.688
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N 43 A 300 V 69 mΩ TO-3PN Through Hole 3 -30 V, +30 V Enhancement - 3V - Single 1
RS Stock No. 541-0856
Mfr. Part No.IRFP150NPBF
BrandInfineon
MYR7.71
Each
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N 42 A 100 V 36 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement 4V 2V 160 W Single 1
RS Stock No. 168-7981
Mfr. Part No.TK42A12N1,S4X(S
BrandToshiba
MYR4.26
Each (In a Tube of 50)
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N 42 A 120 V 9.4 mΩ TO-220SIS Through Hole 3 -20 V, +20 V Enhancement 4V - 35 W Single 1
RS Stock No. 787-9036
Mfr. Part No.SI2318CDS-T1-GE3
BrandVishay
MYR1.481
Each (In a Pack of 20)
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N 5.6 A 40 V 51 mΩ SOT-23 Surface Mount 3 -20 V, +20 V Enhancement - 1.2V 2.1 W Single 1
RS Stock No. 827-6224
Mfr. Part No.TK42A12N1,S4X(S
BrandToshiba
MYR4.998
Each (In a Pack of 5)
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N 42 A 120 V 9.4 mΩ TO-220SIS Through Hole 3 -20 V, +20 V Enhancement 4V - 35 W Single 1
RS Stock No. 671-5064
Mfr. Part No.FQP27P06
MYR6.784
Each (In a Pack of 5)
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P 27 A 60 V 70 mΩ TO-220AB Through Hole 3 -25 V, +25 V Enhancement 4V 2V 120 W Single 1
RS Stock No. 124-8812
Mfr. Part No.IPW65R019C7FKSA1
BrandInfineon
MYR78.69
Each (In a Tube of 30)
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N 75 A 700 V 19 mΩ TO-247 Through Hole 3 -30 V, +30 V Enhancement - - 446 W Single 1
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Mfr. Part No.IPW65R019C7FKSA1
BrandInfineon
MYR85.61
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N 75 A 700 V 19 mΩ TO-247 Through Hole 3 -30 V, +30 V Enhancement - - 446 W Single 1
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Mfr. Part No.IRF620PBF
BrandVishay
MYR3.96
Each
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N 5.2 A 200 V 800 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 50 W Single 1
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Mfr. Part No.BSS138LT1G
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N 200 mA 50 V 3.5 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 1.5V - 225 mW Single 1
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BrandInfineon
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N 200 mA 50 V 3.5 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 1.5V - 225 mW Single 1
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BrandMicrochip
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N 230 mA 60 V 7.5 Ω TO-92 Through Hole 3 -30 V, +30 V Enhancement 2.5V - 1 W Single 1