MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 799-5056
Mfr. Part No.TK17A65W,S5X(M
BrandToshiba
MYR9.762
Each (In a Pack of 5)
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N 17 A 650 V 200 mΩ TO-220SIS Through Hole 3 -30 V, +30 V Enhancement 3.5V - 45 W Single 1
RS Stock No. 178-0835
Mfr. Part No.IRF840APBF
BrandVishay
MYR5.166
Each (In a Tube of 50)
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- - - - - - - - - - - - - -
RS Stock No. 541-0755
Mfr. Part No.IRF530NPBF
BrandInfineon
MYR3.94
Each
units
N 17 A 100 V 90 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 70 W Single 1
RS Stock No. 178-7450
Mfr. Part No.IPT020N10N3ATMA1
BrandInfineon
MYR21.139
Each (On a Reel of 2000)
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N 300 A 100 V 3.7 mΩ HSOF Surface Mount 8 -20 V, +20 V Enhancement - - 375 W Single 1
RS Stock No. 919-4808
Mfr. Part No.IRFP064NPBF
BrandInfineon
MYR9.282
Each (In a Tube of 25)
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N 110 A 55 V 8 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement 4V 2V 200 W Single 1
RS Stock No. 906-4356
Mfr. Part No.IPT020N10N3ATMA1
BrandInfineon
MYR32.045
Each (In a Pack of 2)
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N 300 A 100 V 3.7 mΩ HSOF Surface Mount 8 -20 V, +20 V Enhancement - - 375 W Single 1
RS Stock No. 124-1664
Mfr. Part No.RFP70N06
MYR7.14
Each (In a Tube of 50)
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N 70 A 60 V 14 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 150 W Single 1
RS Stock No. 541-0008
Mfr. Part No.IRFP064NPBF
BrandInfineon
MYR11.67
Each
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N 110 A 55 V 8 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement 4V 2V 200 W Single 1
RS Stock No. 841-312
Mfr. Part No.RFP70N06
MYR8.54
Each
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N 70 A 60 V 14 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 150 W Single 1
RS Stock No. 919-4794
Mfr. Part No.IRF540NPBF
BrandInfineon
MYR3.455
Each (In a Tube of 50)
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N 33 A 100 V 44 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 130 W Single 1
RS Stock No. 177-5489
Mfr. Part No.VN10K
BrandSemelab
MYR112.338
Each (In a Tray of 30)
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N 170 mA 60 V 9 Ω TO-18 Through Hole 3 -3 V, +15 V Enhancement 2.5V - 313 mW Single 1
RS Stock No. 738-7597
Mfr. Part No.VN10K
BrandSemelab
MYR120.85
Each
units
N 170 mA 60 V 9 Ω TO-18 Through Hole 3 -3 V, +15 V Enhancement 2.5V - 313 mW Single 1
RS Stock No. 919-4876
Mfr. Part No.IRF520NPBF
BrandInfineon
MYR2.921
Each (In a Tube of 50)
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N 9.7 A 100 V 200 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 48 W Single 1
RS Stock No. 541-1180
Mfr. Part No.IRF520NPBF
BrandInfineon
MYR4.00
Each
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N 9.7 A 100 V 200 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 48 W Single 1
RS Stock No. 914-8154
Mfr. Part No.IRF540NPBF
BrandInfineon
MYR3.455
Each (In a Pack of 20)
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N 33 A 100 V 44 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 130 W Single 1
RS Stock No. 914-0191
Mfr. Part No.SPP15P10PHXKSA1
BrandInfineon
MYR8.219
Each (In a Pack of 10)
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P 15 A 100 V 240 mΩ TO-220 Through Hole 3 -20 V, +20 V Enhancement 4V 2.1V 128 W Single 1
RS Stock No. 145-9743
Mfr. Part No.SPP15P10PHXKSA1
BrandInfineon
MYR6.85
Each (In a Tube of 50)
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P 15 A 100 V 240 mΩ TO-220 Through Hole 3 -20 V, +20 V Enhancement 4V 2.1V 128 W Single 1
RS Stock No. 177-5480
Mfr. Part No.IRF140
BrandMagnatec
MYR212.73
Each (In a Tray of 10)
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N 28 A 100 V 89 mΩ TO-3 Through Hole 3 -20 V, +20 V Enhancement 4V - 125 W Single 1
RS Stock No. 671-0324
Mfr. Part No.BSS138
MYR0.823
Each (In a Pack of 10)
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N 220 mA 50 V 3.5 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 1.5V 0.8V 360 mW Single 1
RS Stock No. 263-6910
Mfr. Part No.IRF140
BrandMagnatec
MYR277.30
Each
units
N 28 A 100 V 89 mΩ TO-3 Through Hole 3 -20 V, +20 V Enhancement 4V - 125 W Single 1