MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 919-4804
Mfr. Part No.IRL3705NPBF
BrandInfineon
MYR5.954
Each (In a Tube of 50)
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N 89 A 55 V 10 mΩ TO-220AB Through Hole 3 -16 V, +16 V Enhancement 2V 1V 170 W Single 1
RS Stock No. 919-4205
Mfr. Part No.SI2318CDS-T1-GE3
BrandVishay
MYR0.835
Each (On a Reel of 3000)
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N 5.6 A 40 V 51 mΩ SOT-23 Surface Mount 3 -20 V, +20 V Enhancement - 1.2V 2.1 W Single 1
RS Stock No. 540-9991
Mfr. Part No.IRL3705NPBF
BrandInfineon
MYR7.27
Each
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N 89 A 55 V 10 mΩ TO-220AB Through Hole 3 -16 V, +16 V Enhancement 2V 1V 170 W Single 1
RS Stock No. 897-7624
Mfr. Part No.IPW65R019C7FKSA1
BrandInfineon
MYR98.83
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N 75 A 700 V 19 mΩ TO-247 Through Hole 3 -30 V, +30 V Enhancement - - 446 W Single 1
RS Stock No. 103-2965
Mfr. Part No.BSS138LT1G
MYR0.202
Each (On a Reel of 3000)
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N 200 mA 50 V 3.5 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 1.5V - 225 mW Single 1
RS Stock No. 168-7981
Mfr. Part No.TK42A12N1,S4X(S
BrandToshiba
MYR4.26
Each (In a Tube of 50)
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N 42 A 120 V 9.4 mΩ TO-220SIS Through Hole 3 -20 V, +20 V Enhancement 4V - 35 W Single 1
RS Stock No. 896-2381
Mfr. Part No.TK42A12N1,S4X(S
BrandToshiba
MYR3.782
Each (In a Pack of 5)
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N 42 A 120 V 9.4 mΩ TO-220SIS Through Hole 3 -20 V, +20 V Enhancement 4V - 35 W Single 1
RS Stock No. 919-4873
Mfr. Part No.IRFP150NPBF
BrandInfineon
MYR6.709
Each (In a Tube of 25)
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N 42 A 100 V 36 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement 4V 2V 160 W Single 1
RS Stock No. 194-322
Mfr. Part No.IXFH96N15P
BrandIXYS
MYR27.61
Each
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N 96 A 150 V 24 mΩ TO-247 Through Hole 3 -20 V, +20 V Enhancement 5V - 480 W Single 1
RS Stock No. 301-495
Mfr. Part No.IRF840LCPBF
BrandVishay
MYR7.57
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N 8 A 500 V 850 mΩ TO-220AB Through Hole 3 -30 V, +30 V Enhancement - 2V 125 W Single 1
RS Stock No. 168-4492
Mfr. Part No.IXFH96N15P
BrandIXYS
MYR21.041
Each (In a Tube of 30)
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N 96 A 150 V 24 mΩ TO-247 Through Hole 3 -20 V, +20 V Enhancement 5V - 480 W Single 1
RS Stock No. 827-4672
Mfr. Part No.CSD16301Q2
MYR2.079
Each (In a Pack of 10)
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N 5 A 25 V 34 mΩ SON Surface Mount 6 -8 V, +10 V Enhancement 1.55V 0.9V 2.3 W Single 1
RS Stock No. 194-316
Mfr. Part No.IXTP62N15P
BrandIXYS
MYR15.28
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N 62 A 150 V 40 mΩ TO-220 Through Hole 3 -20 V, +20 V Enhancement 5.5V - 350 W Single 1
RS Stock No. 752-7773
Mfr. Part No.2N7002H6327XTSA2
BrandInfineon
MYR0.485
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N 300 mA 60 V 4 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 2.5V 1.5V 500 mW Single 1
RS Stock No. 124-9035
Mfr. Part No.2N7002H6327XTSA2
BrandInfineon
MYR0.282
Each (On a Reel of 3000)
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N 300 mA 60 V 4 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 2.5V 1.5V 500 mW Single 1
RS Stock No. 485-7888
Mfr. Part No.STP80NF10
MYR15.22
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N 80 A 100 V 15 mΩ TO-220 Through Hole 3 -20 V, +20 V Enhancement 4V 2V 300 W Single 1
RS Stock No. 162-8525
Mfr. Part No.CSD16301Q2
MYR0.927
Each (On a Reel of 3000)
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N 5 A 25 V 34 mΩ SON Surface Mount 6 -8 V, +10 V Enhancement 1.55V 0.9V 2.3 W Single 1
RS Stock No. 761-4549
Mfr. Part No.MTD3055VL
MYR4.032
Each (In a Pack of 10)
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N 12 A 60 V 180 mΩ DPAK (TO-252) Surface Mount 3 -20 V, +20 V Enhancement - 1V 48 W Single 1
RS Stock No. 541-0042
Mfr. Part No.IRFP250NPBF
BrandInfineon
MYR9.33
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N 30 A 200 V 75 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement 4V 2V 214 W Single 1
RS Stock No. 178-0827
Mfr. Part No.IRF9630PBF
BrandVishay
MYR4.514
Each (In a Tube of 50)
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