Vishay Si2338DS N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 SI2338DS-T1-GE3
- RS Stock No.:
- 165-6909
- Mfr. Part No.:
- SI2338DS-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Get a bulk buy discount
Add 6000 more to save MYR144.00
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
MYR3,294.00
FREE delivery for orders over RM 150.00
Last RS stock
- Final 3,000 unit(s), ready to ship from another location
Units | Per Unit | Per Reel* | Saving |
|---|---|---|---|
| 3000 - 3000 | MYR1.098 | MYR3,294.00 | - |
| 6000 - 9000 | MYR1.074 | MYR3,222.00 | MYR144.00 |
| 12000 + | MYR1.054 | MYR3,162.00 | MYR528.00 |
*price indicative
- RS Stock No.:
- 165-6909
- Mfr. Part No.:
- SI2338DS-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si2338DS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.2nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Width | 1.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si2338DS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.2nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Height 1.02mm | ||
Length 3.04mm | ||
Width 1.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si2338DS N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 Si2338DS-T1-GE3
- Vishay TrenchFET N-Channel Power MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2302DDS-T1-GE3
- Vishay Si2308BDS N-Channel Power MOSFET 60 V Enhancement, 3-Pin SOT-23 SI2308BDS-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 SI2392ADS-T1-GE3
- Vishay Si2366DS N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2366DS-T1-GE3
- Vishay Si2304DDS N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2304DDS-T1-GE3
- Vishay Si2318CDS N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 SI2318CDS-T1-GE3
- Vishay Single N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 SI2328DS-T1-GE3