Vishay Si2338DS Type N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 Si2338DS-T1-GE3

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Subtotal (1 pack of 20 units)*

MYR42.76

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20 - 740MYR2.138MYR42.76
760 - 1480MYR1.863MYR37.26
1500 +MYR1.721MYR34.42

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Packaging Options:
RS Stock No.:
812-3126
Mfr. Part No.:
Si2338DS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

Si2338DS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.033Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

4.2nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Width

1.4 mm

Length

3.04mm

Height

1.02mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


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