Vishay Si2318CDS Type N-Channel MOSFET, 5.6 A, 40 V Enhancement, 3-Pin SOT-23 SI2318CDS-T1-GE3
- RS Stock No.:
- 787-9036
- Distrelec Article No.:
- 304-02-276
- Mfr. Part No.:
- SI2318CDS-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Subtotal (1 pack of 20 units)*
MYR25.84
FREE delivery for orders over RM 500.00
Temporarily out of stock
- 71,440 unit(s) shipping from 14 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 + | MYR1.292 | MYR25.84 |
*price indicative
- RS Stock No.:
- 787-9036
- Distrelec Article No.:
- 304-02-276
- Mfr. Part No.:
- SI2318CDS-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.6A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-23 | |
| Series | Si2318CDS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 51mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.6A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-23 | ||
Series Si2318CDS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 51mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si2318CDS Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel Power MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay Si2308BDS Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay Si2304DDS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay Si2338DS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay Si2366DS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay Si2374DS Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23