N-Channel MOSFET, 3.6 A, 30 V, 3-Pin SOT-23 Vishay SI2300DS-T1-GE3

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 12V. It has drain-source resistance of 68mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 1.7W and continuous drain current of 3.6A. The minimum and a maximum driving voltage for this transistor are 2.5V and 4.5V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

• DC/DC converter for portable devices
• Load switch

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested

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