Vishay Siliconix TrenchFET P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Si2319DDS-T1-GE3
- RS Stock No.:
- 178-3853
- Mfr. Part No.:
- Si2319DDS-T1-GE3
- Manufacturer:
- Vishay Siliconix
Bulk discount available
Subtotal (1 pack of 50 units)**
MYR88.20
5100 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
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Units | Per Unit | Per Pack** |
---|---|---|
50 - 700 | MYR1.764 | MYR88.20 |
750 - 1450 | MYR1.702 | MYR85.10 |
1500 + | MYR1.617 | MYR80.85 |
**price indicative
- RS Stock No.:
- 178-3853
- Mfr. Part No.:
- Si2319DDS-T1-GE3
- Manufacturer:
- Vishay Siliconix
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay Siliconix | |
Channel Type | P | |
Maximum Continuous Drain Current | 3.6 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | SOT-23 | |
Series | TrenchFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 100 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 1.7 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±20 V | |
Maximum Operating Temperature | +150 °C | |
Width | 1.4mm | |
Transistor Material | Si | |
Length | 3.04mm | |
Typical Gate Charge @ Vgs | 12.5 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Height | 1.02mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Vishay Siliconix | ||
Channel Type P | ||
Maximum Continuous Drain Current 3.6 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type SOT-23 | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.7 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.4mm | ||
Transistor Material Si | ||
Length 3.04mm | ||
Typical Gate Charge @ Vgs 12.5 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Height 1.02mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
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