Vishay Siliconix TrenchFET P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Si2319DDS-T1-GE3 | RS
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    Vishay Siliconix TrenchFET P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Si2319DDS-T1-GE3

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    Subtotal (1 pack of 50 units)**

    MYR88.20

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    5100 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

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    50 - 700MYR1.764MYR88.20
    750 - 1450MYR1.702MYR85.10
    1500 +MYR1.617MYR80.85

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    Packaging Options:
    RS Stock No.:
    178-3853
    Mfr. Part No.:
    Si2319DDS-T1-GE3
    Manufacturer:
    Vishay Siliconix
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    Brand

    Vishay Siliconix

    Channel Type

    P

    Maximum Continuous Drain Current

    3.6 A

    Maximum Drain Source Voltage

    40 V

    Package Type

    SOT-23

    Series

    TrenchFET

    Mounting Type

    Surface Mount

    Pin Count

    3

    Maximum Drain Source Resistance

    100 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    2.5V

    Minimum Gate Threshold Voltage

    1V

    Maximum Power Dissipation

    1.7 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    ±20 V

    Maximum Operating Temperature

    +150 °C

    Width

    1.4mm

    Transistor Material

    Si

    Length

    3.04mm

    Typical Gate Charge @ Vgs

    12.5 nC @ 10 V

    Number of Elements per Chip

    1

    Height

    1.02mm

    Minimum Operating Temperature

    -55 °C

    Forward Diode Voltage

    1.2V

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