Vishay P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 SI2365EDS-T1-GE3

RS Stock No.:: 165-6934
Mfr. Part No.:: SI2365EDS-T1-GE3
Manufacturer:: Vishay

Vishay P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 SI2365EDS-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 3000 units)**

MYR1,137.00

60000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

Real time qty checker

Units	Per Unit	Per Reel**
3000 - 3000	MYR0.379	MYR1,137.00
6000 - 9000	MYR0.371	MYR1,113.00
12000 +	MYR0.364	MYR1,092.00

**price indicative

RS Stock No.:: 165-6934
Mfr. Part No.:: SI2365EDS-T1-GE3
Manufacturer:: Vishay

Si2365EDS, P-Channel 20V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	4.7 A
Maximum Drain Source Voltage	20 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	67.5 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.7 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	23.8 nC @ 8 V
Length	3.04mm
Width	1.4mm
Number of Elements per Chip	1
Height	1.02mm
Minimum Operating Temperature	-50 °C

Vishay P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 SI2365EDS-T1-GE3

FREE delivery for orders over MYR500.00

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

Related links