P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3

RS Stock No.:: 812-3139
Mfr. Part No.:: SI2365EDS-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3

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Bulk discount available

Price Each (In a Pack of 50)

MYR0.697

62700 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Pack**
50 - 700	MYR0.697	MYR34.85
750 - 1450	MYR0.673	MYR33.65
1500 +	MYR0.639	MYR31.95

**price indicative

RS Stock No.:: 812-3139
Mfr. Part No.:: SI2365EDS-T1-GE3
Manufacturer:: Vishay

Si2365EDS, P-Channel 20V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	4.7 A
Maximum Drain Source Voltage	20 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	67.5 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.7 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Transistor Material	Si
Typical Gate Charge @ Vgs	23.8 nC @ 8 V
Length	3.04mm
Maximum Operating Temperature	+150 °C
Width	1.4mm
Number of Elements per Chip	1
Height	1.02mm
Minimum Operating Temperature	-50 °C

P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

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