Vishay N-Channel MOSFET, 3.6 A, 30 V, 3-Pin SOT-23 SI2304DDS-T1-GE3
- RS Stock No.:
- 165-6932
- Mfr. Part No.:
- SI2304DDS-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 reel of 3000 units)**
MYR1,755.00
3000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR500.00
Real time qty checker
Units | Per Unit | Per Reel** |
|---|---|---|
| 3000 - 3000 | MYR0.585 | MYR1,755.00 |
| 6000 - 9000 | MYR0.572 | MYR1,716.00 |
| 12000 + | MYR0.562 | MYR1,686.00 |
**price indicative
- RS Stock No.:
- 165-6932
- Mfr. Part No.:
- SI2304DDS-T1-GE3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.6 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 75 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 1.7 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 4.5 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Length | 3.04mm | |
| Width | 1.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.02mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.6 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 75 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 1.7 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 4.5 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 3.04mm | ||
Width 1.4mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.02mm | ||
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