Vishay N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 SI2308BDS-T1-GE3

RS Stock No.:: 919-0266
Mfr. Part No.:: SI2308BDS-T1-GE3
Manufacturer:: Vishay

Vishay N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 SI2308BDS-T1-GE3

Subtotal (1 reel of 3000 units)**

MYR3,666.00

36000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

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Units	Per Unit	Per Reel**
3000 +	MYR1.222	MYR3,666.00

**price indicative

RS Stock No.:: 919-0266
Mfr. Part No.:: SI2308BDS-T1-GE3
Manufacturer:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	1.9 A
Maximum Drain Source Voltage	60 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	156 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1.09 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	1.4mm
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	2.3 nC @ 4.5 V, 4.5 nC @ 10 V
Length	3.04mm
Height	1.02mm
Minimum Operating Temperature	-55 °C

Vishay N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 SI2308BDS-T1-GE3

FREE delivery for orders over MYR500.00

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

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