Vishay Si2308BDS N-Channel Power MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SI2308BDS-T1-GE3

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Subtotal (1 pack of 20 units)*

MYR50.26

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  • 2,500 unit(s) shipping from 23 October 2026
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Units
Per Unit
Per Pack*
20 - 740MYR2.513MYR50.26
760 - 1480MYR2.464MYR49.28
1500 +MYR2.414MYR48.28

*price indicative

Packaging Options:
RS Stock No.:
710-3257
Mfr. Part No.:
SI2308BDS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

2.3A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Series

Si2308BDS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.192Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.66W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

2.3nC

Maximum Gate Source Voltage Vgs

-20V, +20V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

1.4mm

Length

3.04mm

Standards/Approvals

IEC 61249-2-21

Height

1.02mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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