JFETs

JFETs
A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.
What does JFET stand for?
JFET stands for junction field-effect transistor
N-Channel JFET Construction
The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
P-Channel JFET Construction
The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
Features and Benefits
• High input impedance
• Voltage controlled device
• High degree of isolation between the input and the output
• Less noise
What are they also known as?
JUGFET
What are JFET transistors used for?
JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.
What is the difference between a JFET & BJT (Bipolar Junction Transistor)?
The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.
What is doping of semiconductors?
Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 124-2284
Mfr. Part No.BF861C,215
BrandNXP
MYR1.43
Each (On a Reel of 3000)
units
N 12 → 25mA 25 V -25 V, +25 V 25V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 626-2311
Mfr. Part No.BF513,215
BrandNXP
MYR3.01
Each (In a Pack of 10)
units
N 10 → 18mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 792-5161
Mfr. Part No.2SK3666-3-TB-E
MYR1.207
Each (In a Pack of 50)
units
N 1.2 → 3mA 30 V - -30V Single Single 200 Ω Surface Mount CP 3 4pF 1.1pF 2.9 x 1.5 x 1.1mm
RS Stock No. 792-5167
Mfr. Part No.2SK3557-7-TB-E
MYR1.387
Each (In a Pack of 20)
units
N 16 → 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 166-2319
Mfr. Part No.BSR58
MYR0.315
Each (On a Reel of 3000)
units
N 8 → 80mA 0.4 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.97mm
RS Stock No. 626-2327
Mfr. Part No.BF545A,215
BrandNXP
MYR2.191
Each (In a Pack of 10)
units
N 2.0 → 6.5mA 30 V -30 V -30V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 867-3287
Mfr. Part No.TF412ST5G
MYR1.35
Each (In a Pack of 50)
units
N 1.2 → 3mA 30 V - -30V Single Single - Surface Mount SOT-883 3 4pF 4pF 1.08 x 0.68 x 0.41mm
RS Stock No. 626-3314
Mfr. Part No.PMBFJ309,215
BrandNXP
MYR1.46
Each (In a Pack of 10)
units
N 12 → 30mA 25 V -25 V -25V Single Single 50 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 626-2282
Mfr. Part No.BF510,215
BrandNXP
MYR3.067
Each (In a Pack of 10)
units
N 0.7 → 3.0mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 103-8162
Mfr. Part No.PMBFJ177,215
BrandNXP
MYR0.608
Each (On a Reel of 3000)
units
P 1.5 → 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 166-2910
Mfr. Part No.J111
MYR0.301
Each (In a Bag of 10000)
units
N min. 20mA - -35 V 35V Single Single 30 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 145-4162
Mfr. Part No.2SK3666-3-TB-E
MYR0.323
Each (On a Reel of 3000)
units
N 1.2 → 3mA 30 V - -30V Single Single 200 Ω Surface Mount CP 3 4pF 1.1pF 2.9 x 1.5 x 1.1mm
RS Stock No. 163-0319
Mfr. Part No.TF412ST5G
MYR0.368
Each (On a Reel of 8000)
units
N 1.2 → 3mA 30 V - -30V Single Single - Surface Mount SOT-883 3 4pF 4pF 1.08 x 0.68 x 0.41mm
RS Stock No. 166-0537
Mfr. Part No.BF556A,215
BrandNXP
MYR1.39
Each (On a Reel of 3000)
units
N 3 → 7mA 30 V -30 V -30V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 163-2020
Mfr. Part No.2SK3557-6-TB-E
MYR0.507
Each (On a Reel of 3000)
units
N 10 → 20mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 807-5201
Mfr. Part No.BSR58
MYR0.536
Each (In a Pack of 100)
units
N 8 → 80mA 0.4 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.97mm
RS Stock No. 806-4251
Mfr. Part No.MMBF4093
MYR1.102
Each (In a Pack of 50)
units
N min. 8mA 0.2 V -40 V 40V Single Single 80 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 166-0535
Mfr. Part No.BF510,215
BrandNXP
MYR1.333
Each (On a Reel of 3000)
units
N 0.7 → 3.0mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 112-4185
Mfr. Part No.PMBF4393,215
BrandNXP
MYR1.85
Each
units
N 50 → 150mA 40 V -40 V 40V Single Single 100 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS Stock No. 177-5508
Mfr. Part No.2N4392CSM
BrandSemelab
MYR318.138
Each (In a Tray of 100)
units
N 25 → 75mA 40 V +40 V 40V Single Single 60 Ω Surface Mount SOT-23 3 - - 3.05 x 2.54 x 1.02mm
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