JFETs

JFETs
A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.
What does JFET stand for?
JFET stands for junction field-effect transistor
N-Channel JFET Construction
The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
P-Channel JFET Construction
The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
Features and Benefits
• High input impedance
• Voltage controlled device
• High degree of isolation between the input and the output
• Less noise
What are they also known as?
JUGFET
What are JFET transistors used for?
JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.
What is the difference between a JFET & BJT (Bipolar Junction Transistor)?
The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.
What is doping of semiconductors?
Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 800-9364
Mfr. Part No.2SK3666-2-TB-E
MYR0.456
Each (In a Pack of 100)
units
N 0.6 → 1.5mA 30 V - -30V Single Single 200 Ω Surface Mount SOT-23 3 - - 2.9 x 1.5 x 1.1mm
RS Stock No. 163-2024
Mfr. Part No.2SK932-23-TB-E
MYR0.528
Each (On a Reel of 3000)
units
N 10 → 17mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 163-2019
Mfr. Part No.2SK2394-7-TB-E
MYR0.713
Each (On a Reel of 3000)
units
N 16 → 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 806-1753
Mfr. Part No.J111
MYR1.074
Each (In a Pack of 50)
units
N min. 20mA - -35 V 35V Single Single 30 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 166-3093
Mfr. Part No.MMBFJ111
MYR0.389
Each (On a Reel of 3000)
units
N 20mA 15 V -35 V 35V Single Single 30 Ω Surface Mount SOT-23 3 28pF 28pF 2.9 x 1.3 x 1.04mm
RS Stock No. 166-3085
Mfr. Part No.MMBF5103
MYR0.341
Each (On a Reel of 3000)
units
N 10 → 40mA 20 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 1.04mm
RS Stock No. 626-2412
Mfr. Part No.BF861C,215
BrandNXP
MYR3.458
Each (In a Pack of 10)
units
N 12 → 25mA 25 V +25 V 25V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 163-0963
Mfr. Part No.MMBFJ177LT1G
MYR0.495
Each (On a Reel of 3000)
units
P 1.5 → 20mA - - 25V dc Single Single 300 Ω Surface Mount SOT-23 3 - 11pF 3.04 x 1.4 x 1.01mm
RS Stock No. 773-7819
Mfr. Part No.MMBFJ309LT1G
MYR1.33
Each (In a Pack of 10)
units
N 12 → 30mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS Stock No. 166-2021
Mfr. Part No.J109
MYR0.59
Each (In a Bag of 1000)
units
N min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS Stock No. 163-2025
Mfr. Part No.2SK932-24-TB-E
MYR0.601
Each (On a Reel of 3000)
units
N 14.5 → 24mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 163-0964
Mfr. Part No.MMBFJ309LT1G
MYR0.471
Each (On a Reel of 3000)
units
N 12 → 30mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS Stock No. 792-5177
Mfr. Part No.2SK932-24-TB-E
MYR1.50
Each (In a Pack of 25)
units
N 14.5 → 24mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 792-5155
Mfr. Part No.2SK2394-7-TB-E
MYR1.86
Each (In a Pack of 25)
units
N 16 → 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 806-4257
Mfr. Part No.MMBF4092
MYR0.847
Each (In a Pack of 50)
units
N min. 15mA 0.2 V -40 V 40V Single Single 50 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 663-9045
Mfr. Part No.2SK1740-5-TB-E
BrandSanyo
MYR1.66
Each (In a Pack of 5)
units
N - 40 V - -40V Single - 30 Ω Surface Mount CP 3 2.5pF 11pF 2.9 x 1.5 x 1.1mm
RS Stock No. 145-5553
Mfr. Part No.MMBFJ112
MYR0.372
Each (On a Reel of 3000)
units
N min. 5mA - -35 V 35V Single Single 50 Ω Surface Mount SOT-23 3 28pF 28pF 2.92 x 1.3 x 0.93mm
RS Stock No. 166-0536
Mfr. Part No.BF513,215
BrandNXP
MYR1.30
Each (On a Reel of 3000)
units
N 10 → 18mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 864-7846
Mfr. Part No.MMBF4393LT1G
MYR1.169
Each (In a Pack of 50)
units
N 5 → 30mA 30 V +30 V 30V Single Single 100 Ω Surface Mount SOT-23 3 14 pF @ 0 V 14 pF @ -15 V 3.04 x 1.4 x 1.01mm
RS Stock No. 626-2355
Mfr. Part No.BF556A,215
BrandNXP
MYR1.669
Each (In a Pack of 10)
units
N 3 → 7mA 30 V -30 V -30V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
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