JFETs

A JFET is a four-terminal device, the terminals are called the gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs and N-Channel P-Channel. FET stands for junction field-effect transistor. They can also be referred to as a JUGFET

N-Channel JFET Construction

The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

P-Channel JFET Construction

The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

Features and Benefits

  • High input impedance
  • Voltage-controlled device
  • A high degree of isolation between the input and the output
  • Less noise

What are JFET transistors used for?

JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.

What is the difference between a JFET and BJT (Bipolar Junction Transistor)?

The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carriers flow.

What is the doping of semiconductors?

Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.


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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 166-2910
Mfr. Part No.J111
MYR0.323
Each (In a Bag of 10000)
units
N min. 20mA - -35 V 35V Single Single 30 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 163-0320
Mfr. Part No.TF414T5G
MYR0.403
Each (On a Reel of 8000)
units
N 0.05 to 0.13mA 40 V - -40V Single Single - Surface Mount SOT-883 3 0.7pF 0.3pF 1.07 x 0.67 x 0.41mm
RS Stock No. 163-2021
Mfr. Part No.2SK3557-7-TB-E
MYR0.662
Each (On a Reel of 3000)
units
N 16 to 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 792-5167
Mfr. Part No.2SK3557-7-TB-E
MYR1.249
Each (In a Pack of 20)
units
N 16 to 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 166-0536
Mfr. Part No.BF513,215
BrandNXP
MYR1.30
Each (On a Reel of 3000)
units
N 10 to 18mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 761-3684
Mfr. Part No.MMBFJ112
MYR1.06
Each (In a Pack of 25)
units
N min. 5mA - -35 V 35V Single Single 50 Ω Surface Mount SOT-23 3 28pF 28pF 2.92 x 1.3 x 0.93mm
RS Stock No. 163-2025
Mfr. Part No.2SK932-24-TB-E
MYR0.67
Each (On a Reel of 3000)
units
N 14.5 to 24mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 166-0537
Mfr. Part No.BF556A,215
BrandNXP
MYR1.39
Each (On a Reel of 3000)
units
N 3 to 7mA 30 V -30 V -30V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 807-5201
Mfr. Part No.BSR58
MYR0.536
Each (In a Pack of 100)
units
N 8 to 80mA 0.4 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.97mm
RS Stock No. 800-9364
Mfr. Part No.2SK3666-2-TB-E
MYR0.42
Each (In a Pack of 100)
units
N 0.6 to 1.5mA 30 V - -30V Single Single 200 Ω Surface Mount SOT-23 3 - - 2.9 x 1.5 x 1.1mm
RS Stock No. 145-5553
Mfr. Part No.MMBFJ112
MYR0.388
Each (On a Reel of 3000)
units
N min. 5mA - -35 V 35V Single Single 50 Ω Surface Mount SOT-23 3 28pF 28pF 2.92 x 1.3 x 0.93mm
RS Stock No. 663-9045
Mfr. Part No.2SK1740-5-TB-E
BrandSanyo
MYR1.66
Each (In a Pack of 5)
units
N - 40 V - -40V Single - 30 Ω Surface Mount CP 3 2.5pF 11pF 2.9 x 1.5 x 1.1mm
RS Stock No. 792-5161
Mfr. Part No.2SK3666-3-TB-E
MYR1.026
Each (In a Pack of 50)
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N 1.2 to 3mA 30 V - -30V Single Single 200 Ω Surface Mount CP 3 4pF 1.1pF 2.9 x 1.5 x 1.1mm
RS Stock No. 806-1750
Mfr. Part No.J109
MYR1.264
Each (In a Pack of 25)
units
N min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS Stock No. 792-5177
Mfr. Part No.2SK932-24-TB-E
MYR1.50
Each (In a Pack of 25)
units
N 14.5 to 24mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 626-2355
Mfr. Part No.BF556A,215
BrandNXP
MYR1.502
Each (In a Pack of 10)
units
N 3 to 7mA 30 V -30 V -30V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 806-4318
Mfr. Part No.MMBFJ270
MYR1.571
Each (In a Pack of 50)
units
P -2 to -15mA 15 V +30 V -30V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 1.04mm
RS Stock No. 166-3085
Mfr. Part No.MMBF5103
MYR0.359
Each (On a Reel of 3000)
units
N 10 to 40mA 20 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 1.04mm
RS Stock No. 163-0963
Mfr. Part No.MMBFJ177LT1G
MYR0.516
Each (On a Reel of 3000)
units
P 1.5 to 20mA - - 25V dc Single Single 300 Ω Surface Mount SOT-23 3 - 11pF 3.04 x 1.4 x 1.01mm
RS Stock No. 163-2019
Mfr. Part No.2SK2394-7-TB-E
MYR0.834
Each (On a Reel of 3000)
units
N 16 to 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm