JFETs

JFETs
A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.
What does JFET stand for?
JFET stands for junction field-effect transistor
N-Channel JFET Construction
The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
P-Channel JFET Construction
The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
Features and Benefits
• High input impedance
• Voltage controlled device
• High degree of isolation between the input and the output
• Less noise
What are they also known as?
JUGFET
What are JFET transistors used for?
JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.
What is the difference between a JFET & BJT (Bipolar Junction Transistor)?
The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.
What is doping of semiconductors?
Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 179-1061
Mfr. Part No.PMBFJ309,215
BrandNXP
MYR0.572
Each (On a Reel of 3000)
units
N 12 → 30mA 25 V -25 V -25V Single Single 50 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 773-7813
Mfr. Part No.MMBFJ310LT3G
MYR1.42
Each (In a Pack of 10)
units
N 24 → 60mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS Stock No. 806-4251
Mfr. Part No.MMBF4093
MYR1.102
Each (In a Pack of 50)
units
N min. 8mA 0.2 V -40 V 40V Single Single 80 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 773-7816
Mfr. Part No.MMBFJ177LT1G
MYR1.42
Each (In a Pack of 10)
units
P 1.5 → 20mA - - 25V dc Single Single 300 Ω Surface Mount SOT-23 3 - 11pF 3.04 x 1.4 x 1.01mm
RS Stock No. 663-9033
Mfr. Part No.2SK1332-3-TL-E
BrandSanyo
MYR0.93
Each (In a Pack of 5)
units
N - 30 V - -30V Single - - Surface Mount MCP 3 0.9pF 5pF 2 x 1.25 x 0.9mm
RS Stock No. 920-9928
Mfr. Part No.TF414T5G
MYR1.036
Each (In a Pack of 50)
units
N 0.05 → 0.13mA 40 V - -40V Single Single - Surface Mount SOT-883 3 0.7pF 0.3pF 1.07 x 0.67 x 0.41mm
RS Stock No. 145-5192
Mfr. Part No.2SK3666-2-TB-E
MYR0.323
Each (On a Reel of 3000)
units
N 0.6 → 1.5mA 30 V - -30V Single Single 200 Ω Surface Mount SOT-23 3 - - 2.9 x 1.5 x 1.1mm
RS Stock No. 166-2319
Mfr. Part No.BSR58
MYR0.315
Each (On a Reel of 3000)
units
N 8 → 80mA 0.4 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.97mm
RS Stock No. 625-5745
Mfr. Part No.MMBFJ310LT1G
MYR1.528
Each (In a Pack of 5)
units
N 24 → 60mA 25 V +25 V - Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm
RS Stock No. 124-2284
Mfr. Part No.BF861C,215
BrandNXP
MYR1.43
Each (On a Reel of 3000)
units
N 12 → 25mA 25 V -25 V, +25 V 25V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 112-4185
Mfr. Part No.PMBF4393,215
BrandNXP
MYR1.85
Each
units
N 50 → 150mA 40 V -40 V 40V Single Single 100 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS Stock No. 864-7840
Mfr. Part No.MMBFJ175LT1G
MYR1.42
Each (In a Pack of 25)
units
P -7 → -60mA 15 V - -25V Single Single 125 Ω Surface Mount SOT-23 3 11 pF @ 0 V 11 pF @ -10 V 3.04 x 1.4 x 1.01mm
RS Stock No. 671-1141
Mfr. Part No.MMBFJ177
MYR1.596
Each (In a Pack of 5)
units
P 1.5 → 20mA - +30 V -30V Single Single 300 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 163-2021
Mfr. Part No.2SK3557-7-TB-E
MYR0.593
Each (On a Reel of 3000)
units
N 16 → 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 163-0320
Mfr. Part No.TF414T5G
MYR0.368
Each (On a Reel of 8000)
units
N 0.05 → 0.13mA 40 V - -40V Single Single - Surface Mount SOT-883 3 0.7pF 0.3pF 1.07 x 0.67 x 0.41mm
RS Stock No. 626-2327
Mfr. Part No.BF545A,215
BrandNXP
MYR2.191
Each (In a Pack of 10)
units
N 2.0 → 6.5mA 30 V -30 V -30V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 103-8160
Mfr. Part No.PMBF4393,215
BrandNXP
MYR0.857
Each (On a Reel of 3000)
units
N 50 → 150mA 40 V -40 V 40V Single Single 100 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 806-4282
Mfr. Part No.MMBF5103
MYR1.15
Each (In a Pack of 50)
units
N 10 → 40mA 20 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 1.04mm
RS Stock No. 749-8268
Mfr. Part No.DSK5J01R0L
BrandPanasonic
MYR1.70
Each (In a Pack of 20)
units
N 5 → 12mA - - -55V Single Single - Surface Mount SMini3 F2 B 3 - - 2 x 1.25 x 0.8mm
RS Stock No. 103-8162
Mfr. Part No.PMBFJ177,215
BrandNXP
MYR0.608
Each (On a Reel of 3000)
units
P 1.5 → 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
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