N-Channel MOSFET, 5 A, 500 V, 3-Pin TO-220F onsemi FQPF5N50CYDTU
- RS Stock No.:
- 862-8779
- Mfr. Part No.:
- FQPF5N50CYDTU
- Manufacturer:
- onsemi
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Price Each (In a Pack of 10)
Was MYR7.238
You pay
MYR5.346
units | Per Unit | Per Pack* |
10 - 10 | MYR5.346 | MYR53.46 |
20 - 20 | MYR5.233 | MYR52.33 |
30 + | MYR5.075 | MYR50.75 |
*price indicative |
- RS Stock No.:
- 862-8779
- Mfr. Part No.:
- FQPF5N50CYDTU
- Manufacturer:
- onsemi
Legislation and Compliance
Product Details
QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor
Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
Channel Type | N |
Maximum Continuous Drain Current | 5 A |
Maximum Drain Source Voltage | 500 V |
Package Type | TO-220F |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 1.4 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 38 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Length | 10.16mm |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Width | 4.7mm |
Typical Gate Charge @ Vgs | 18 nC @ 10 V |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Series | QFET |
Height | 15.87mm |