STMicroelectronics N-Channel MOSFET, 15 A, 600 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 192-4661
- Mfr. Part No.:
- STP26N60DM6
- Manufacturer:
- STMicroelectronics
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View bulk pricing optionsSubtotal (1 tube of 50 units)*
MYR751.00
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- Shipping from 04 January 2027
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Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | MYR15.02 | MYR751.00 |
| 100 - 150 | MYR14.689 | MYR734.45 |
| 200 + | MYR14.419 | MYR720.95 |
*price indicative
- RS Stock No.:
- 192-4661
- Mfr. Part No.:
- STP26N60DM6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 195mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 110W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.6mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 15.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 195mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 110W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25V | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Operating Temperature 150°C | ||
Width 4.6mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 15.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
Extremely high dv/dt ruggedness
Zener-protected
Related links
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