Infineon SIPMOS Type N-Channel MOSFET, 120 mA, 600 V Enhancement, 4-Pin SOT-223 BSP125H6327XTSA1
- RS Stock No.:
- 826-9276
- Distrelec Article No.:
- 304-44-411
- Mfr. Part No.:
- BSP125H6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
MYR118.30
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 19 May 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 200 | MYR2.366 | MYR118.30 |
| 250 - 450 | MYR2.247 | MYR112.35 |
| 500 + | MYR2.135 | MYR106.75 |
*price indicative
- RS Stock No.:
- 826-9276
- Distrelec Article No.:
- 304-44-411
- Mfr. Part No.:
- BSP125H6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 45Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.4nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.5mm | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Width | 3.5 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 45Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.4nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Operating Temperature 150°C | ||
Length 6.5mm | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Width 3.5 mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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