N-Channel MOSFET, 120 mA, 600 V, 3-Pin SOT-223 Infineon BSP125H6327XTSA1
- RS Stock No.:
- 165-5811
- Mfr. Part No.:
- BSP125H6327XTSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 reel of 1000 units)**
MYR1,596.00
Stock check temporarily unavailable - call for stock availability
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Reel** |
|---|---|---|
| 1000 - 1000 | MYR1.596 | MYR1,596.00 |
| 2000 - 3000 | MYR1.561 | MYR1,561.00 |
| 4000 + | MYR1.532 | MYR1,532.00 |
**price indicative
- RS Stock No.:
- 165-5811
- Mfr. Part No.:
- BSP125H6327XTSA1
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 mA | |
| Maximum Drain Source Voltage | 600 V | |
| Series | SIPMOS® | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 45 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 1.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.5mm | |
| Width | 3.5mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 4.4 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
Select all | ||
|---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 mA | ||
Maximum Drain Source Voltage 600 V | ||
Series SIPMOS® | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 45 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.5mm | ||
Width 3.5mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 4.4 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
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