Infineon BSP135I N-Channel MOSFET, 120 mA, 600 V Depletion, 4-Pin SOT-223 BSP135IXTSA1
- RS Stock No.:
- 225-0554
- Mfr. Part No.:
- BSP135IXTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 reel of 1000 units)*
MYR1,637.00
FREE delivery for orders over RM 150.00
- Shipping from 15 October 2027
Units | Per Unit | Per Reel* |
|---|---|---|
| 1000 - 2000 | MYR1.637 | MYR1,637.00 |
| 3000 - 4000 | MYR1.574 | MYR1,574.00 |
| 5000 + | MYR1.554 | MYR1,554.00 |
*price indicative
- RS Stock No.:
- 225-0554
- Mfr. Part No.:
- BSP135IXTSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | BSP135I | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 60Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.8W | |
| Typical Gate Charge Qg @ Vgs | 3.7nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Width | 3.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series BSP135I | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 60Ω | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.8W | ||
Typical Gate Charge Qg @ Vgs 3.7nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Height 1.8mm | ||
Width 3.7mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon BSP135I Series MOSFET, 600V Maximum Drain Source Voltage, 120mA Maximum Continuous Drain Current - BSP135IXTSA1
Features and Benefits:
• 60Ω maximum RDS(on) provides low on-state conduction loss
• 1.8W maximum power dissipation supports modest thermal loads
• 120mA continuous drain current for steady low-current applications
• 3.7nC typical gate charge for predictable switching performance
• 20V maximum gate-source withstand for robust gate handling
Applications
• Ideal for automotive electronics requiring component ruggedness
• Used with surface-mount assemblies on Compact boards
• Can be used for current-limiting or sensing in control circuits
• Suitable for thermal-stressed environments from −55°C to 150°C
What package type does it use for PCB assembly?
What electrical polarity and conduction mode does it employ?
What pin count is available for board layout considerations?
What physical profile should be allowed for enclosure design?
What automotive suitability standard is met for vehicle use?
Related links
- Infineon BSP135I N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223 BSP135IXTSA1
- Infineon SIPMOS N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223
- Infineon SIPMOS N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223 BSP135H6327XTSA1
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- Infineon SIPMOS N-Channel MOSFET 200 V Depletion, 4-Pin SOT-223
- Infineon BSS123I N-Channel MOSFET 100 V Depletion, 4-Pin SOT-223 BSS123IXTSA1
- Infineon SIPMOS N-Channel MOSFET 200 V Depletion, 4-Pin SOT-223 BSP149H6327XTSA1
