Infineon BSP135I Type N-Channel MOSFET, 120 mA, 600 V Depletion, 4-Pin SOT-223 BSP135IXTSA1
- RS Stock No.:
- 225-0555
- Mfr. Part No.:
- BSP135IXTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
MYR21.19
FREE delivery for orders over RM 500.00
In Stock
- Plus 220 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | MYR2.119 | MYR21.19 |
| 20 - 90 | MYR1.995 | MYR19.95 |
| 100 - 240 | MYR1.836 | MYR18.36 |
| 250 - 490 | MYR1.70 | MYR17.00 |
| 500 + | MYR1.629 | MYR16.29 |
*price indicative
- RS Stock No.:
- 225-0555
- Mfr. Part No.:
- BSP135IXTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223 | |
| Series | BSP135I | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 60Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.7nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Width | 3.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223 | ||
Series BSP135I | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 60Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.7nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Height 1.8mm | ||
Width 3.7 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon BSP135I is the small signal, small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. This MOSFET have enhancement and depletion-mode options.
PCB-space and cost savings
Gate drive flexibility
Reduced design complexity
Environmentally friendly
High overall efficiency
Related links
- Infineon BSP135I Type N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223 BSP135H6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223 BSP125H6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223
- Microchip DN2540 Type N-Channel MOSFET 400 V Depletion, 3-Pin TO-92 DN2540N3-G
- Microchip DN2540 Type N-Channel MOSFET 400 V Depletion, 3-Pin TO-92
- Infineon SIPMOS Type N-Channel MOSFET 200 V Depletion, 4-Pin SOT-223 BSP149H6327XTSA1