Infineon BSP Type N-Channel MOSFET, 0.12 A, 40 V Enhancement, 3-Pin SOT-223
- RS Stock No.:
- 250-0527
- Mfr. Part No.:
- BSP125H6433XTMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 4000 units)*
MYR5,700.00
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 28 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 4000 - 4000 | MYR1.425 | MYR5,700.00 |
| 8000 - 8000 | MYR1.382 | MYR5,528.00 |
| 12000 + | MYR1.327 | MYR5,308.00 |
*price indicative
- RS Stock No.:
- 250-0527
- Mfr. Part No.:
- BSP125H6433XTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.12A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-223 | |
| Series | BSP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.12A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-223 | ||
Series BSP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon Small Signal n-channel products are suitable for automotive applications. This SIPMOS Power-Transistor is an N-Channel, Enhancement mode with Vds of 600 V, Rds(on) 45 Ω and Id is 0.12 A. It is dv/dt rated.
Pb-free lead plating
Maximum power dissipation is 360mW
Related links
- Infineon BSP Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-223 BSP125H6433XTMA1
- Infineon BSP Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223
- Infineon BSP Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223 BSP296NH6433XTMA1
- Infineon BSP Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223
- Infineon BSP Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223 BSP316PH6327XTSA1
- Infineon BSP Type N-Channel MOSFET 600 V Depletion, 4-Pin PG-SOT223
- Infineon BSP Type N-Channel MOSFET 600 V Depletion, 4-Pin PG-SOT223 BSP135H6906XTSA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223