Infineon BSP Type P-Channel MOSFET, 680 mA, -100 V Enhancement, 3-Pin SOT-223 BSP316PH6327XTSA1
- RS Stock No.:
- 250-0536
- Distrelec Article No.:
- 304-40-496
- Mfr. Part No.:
- BSP316PH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
MYR20.05
FREE delivery for orders over RM 150.00
In Stock
- 910 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | MYR4.01 | MYR20.05 |
| 10 - 95 | MYR3.608 | MYR18.04 |
| 100 - 245 | MYR3.248 | MYR16.24 |
| 250 - 495 | MYR2.926 | MYR14.63 |
| 500 + | MYR2.628 | MYR13.14 |
*price indicative
- RS Stock No.:
- 250-0536
- Distrelec Article No.:
- 304-40-496
- Mfr. Part No.:
- BSP316PH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 680mA | |
| Maximum Drain Source Voltage Vds | -100V | |
| Package Type | SOT-223 | |
| Series | BSP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1800mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 680mA | ||
Maximum Drain Source Voltage Vds -100V | ||
Package Type SOT-223 | ||
Series BSP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1800mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSP Series MOSFET, 100V Maximum Drain‑Source Voltage, +150°C Maximum Operating Temperature - BSP316PH6327XTSA1
This p‑channel MOSFET is a surface‑mount transistor designed for power switching in temperature‑demanding environments. It operates across a wide thermal range and is intended for applications requiring controlled drain‑source conduction with moderate continuous current capability. The component meets automotive screening and environmental restrictions for use where standards compliance is required.
Features and Benefits:
• 1800mΩ Rds(on) reduces conduction losses and simplifies thermal design
• 0.68A continuous drain current supports low‑to‑moderate load switching
• 80nC typical gate charge enables Faster gate transitions with lower drive energy
• 81W power dissipation allows sustained energy handling in constrained packages
• +150°C maximum operating temperature permits use in high‑temperature assemblies
• 0.68A continuous drain current supports low‑to‑moderate load switching
• 80nC typical gate charge enables Faster gate transitions with lower drive energy
• 81W power dissipation allows sustained energy handling in constrained packages
• +150°C maximum operating temperature permits use in high‑temperature assemblies
Applications
• Suitable for automotive subsystem power management
• Ideal for surface‑mount regulator and load‑switch circuits
• Used with battery management and low‑current switching modules
• Can be used for thermal‑tolerant power‑path control on Compact boards
• Suitable for designs requiring RoHS‑compliant P‑channel components
• Ideal for surface‑mount regulator and load‑switch circuits
• Used with battery management and low‑current switching modules
• Can be used for thermal‑tolerant power‑path control on Compact boards
• Suitable for designs requiring RoHS‑compliant P‑channel components
What gate voltage limits must be observed during operation?
The device accepts up to 20V between gate and source and should not exceed that value.
What package and mounting style does it use for PCB integration?
It is supplied in a SOT‑223 package intended for surface mounting to aid thermal coupling.
What electrothermal behaviour applies for sustained dissipation?
The part is rated to dissipate up to 81W under specified conditions but requires appropriate PCB thermal management.
Is the device qualified for automotive environments?
It complies with AEC‑Q101 standards for automotive‑grade semiconductor screening.
What environmental restriction standard does it meet?
The component is RoHS compliant, meeting lead‑free and restricted‑substance requirements.
Related links
- Infineon BSP Type P-Channel MOSFET -100 V Enhancement, 3-Pin SOT-223 BSP316PH6327XTSA1
- Infineon BSP N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223 BSP296NH6433XTMA1
- Vishay IRFL Type P-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 IRFL9110TRPBF
- DiodesZetex Type P-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 ZVP2110GTA
- Infineon ISP Type P-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223 ISP20EP10LMXTSA1
- DiodesZetex Quad 4 Type P 800 mA 8-Pin SOT-223 ZXMHC10A07T8TA
- DiodesZetex Quad 4 Type P 800 mA 8-Pin SOT-223
- onsemi Isolated 2 Type P 680 mA 6-Pin SOT-23 FDC6321C
