Infineon BSP N-Channel MOSFET, 120 mA, 600 V Enhancement, 3-Pin SOT-223 BSP125H6433XTMA1
- RS Stock No.:
- 250-0528
- Mfr. Part No.:
- BSP125H6433XTMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
MYR17.96
FREE delivery for orders over RM 150.00
In Stock
- 3,910 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | MYR3.592 | MYR17.96 |
| 10 - 95 | MYR3.24 | MYR16.20 |
| 100 - 245 | MYR2.91 | MYR14.55 |
| 250 - 495 | MYR2.618 | MYR13.09 |
| 500 + | MYR2.358 | MYR11.79 |
*price indicative
- RS Stock No.:
- 250-0528
- Mfr. Part No.:
- BSP125H6433XTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223 | |
| Series | BSP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45000mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223 | ||
Series BSP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45000mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSP Series MOSFET, 600V Maximum Drain-Source Voltage, 81W Maximum Power Dissipation - BSP125H6433XTMA1
This MOSFET is a surface-mounted enhancement-mode N-channel device intended for high-voltage switching and power dissipation tasks in Compact electronic assemblies. It operates across a wide temperature span suited to demanding conditions and incorporates a three-pin SOT-223 package for straightforward PCB placement. The component is RoHS compliant and meets automotive qualification standards for use in regulated vehicle environments.
Features and Benefits:
• 600V drain-source rating enables high-voltage switching
• 81W power dissipation supports sustained thermal loads
• 0.12A continuous drain current suits low-current control paths
• 45,000mΩ on-resistance minimises conduction losses
• 80nC gate charge at 20V simplifies gate-drive design
• 81W power dissipation supports sustained thermal loads
• 0.12A continuous drain current suits low-current control paths
• 45,000mΩ on-resistance minimises conduction losses
• 80nC gate charge at 20V simplifies gate-drive design
Applications
• Suitable for industrial power supply switching stages
• Ideal for automotive control circuits requiring qualification
• Used with Compact converters needing SOT-223 mounting
• Can be used for high-temperature electronic modules
• Suitable for surface-mount prototype and production boards
• Ideal for automotive control circuits requiring qualification
• Used with Compact converters needing SOT-223 mounting
• Can be used for high-temperature electronic modules
• Suitable for surface-mount prototype and production boards
What gate voltage limits must be observed?
The gate-source voltage must not exceed 20V to prevent gate-region damage.
What thermal range can be expected during operation?
The device is rated for continuous use from -55°C up to +150°C to accommodate wide environmental conditions.
How many pins and what package type should PCB designers allow for?
It uses a three-pin SOT-223 package suitable for surface-mount assembly and typical soldering processes.
What standards or approvals apply to this component?
It complies with RoHS directives and meets the AEC-Q101 automotive qualification.
Related links
- Infineon BSP N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-223 BSP125H6433XTMA1
- Infineon BSP N-Channel MOSFET 600 V Depletion, 4-Pin PG-SOT223 BSP135H6906XTSA1
- Infineon BSP N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223 BSP296NH6433XTMA1
- Infineon SIPMOS N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223 BSP125H6327XTSA1
- Infineon SIPMOS N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223
- Infineon BSP135I N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223 BSP135IXTSA1
- Infineon SIPMOS N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223 BSP135H6327XTSA1
- STMicroelectronics SuperMESH N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223 STN1NK60Z