Vishay Si4164DY Type N-Channel TrenchFET Power MOSFET, 30 A, 30 V Enhancement, 8-Pin SOIC SI4164DY-T1-GE3

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Subtotal (1 pack of 10 units)*

MYR54.10

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Units
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Per Pack*
10 - 620MYR5.41MYR54.10
630 - 1240MYR4.608MYR46.08
1250 +MYR4.363MYR43.63

*price indicative

Packaging Options:
RS Stock No.:
812-3198
Mfr. Part No.:
SI4164DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

TrenchFET Power MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Series

Si4164DY

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0032Ω

Channel Mode

Enhancement

Forward Voltage Vf

0.72V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

26.5nC

Maximum Power Dissipation Pd

6W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Height

1.55mm

Length

5mm

Standards/Approvals

JEDEC JS709A, RoHS

Width

4 mm

Automotive Standard

No

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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