Vishay TrenchFET Type N-Channel MOSFET, 45.5 A, 30 V Enhancement, 8-Pin SO-8 SIRA88DP-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 25 units)*

MYR37.575

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 11 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per Unit
Per Pack*
25 - 725MYR1.503MYR37.58
750 - 1475MYR1.371MYR34.28
1500 +MYR1.212MYR30.30

*price indicative

Packaging Options:
RS Stock No.:
134-9696
Mfr. Part No.:
SIRA88DP-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45.5A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

16.8nC

Maximum Power Dissipation Pd

25W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.12mm

Standards/Approvals

No

Length

6.25mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links