Vishay TrenchFET Type N-Channel MOSFET, 45.5 A, 30 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

MYR2,661.00

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Units
Per Unit
Per Reel*
3000 - 3000MYR0.887MYR2,661.00
6000 - 9000MYR0.867MYR2,601.00
12000 +MYR0.851MYR2,553.00

*price indicative

RS Stock No.:
134-9164
Mfr. Part No.:
SIRA88DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45.5A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

16.8nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

25W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Height

1.12mm

Width

5.26 mm

Length

6.25mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


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