Vishay TrenchFET Type N-Channel MOSFET, 8.3 A, 100 V Enhancement, 8-Pin SO-8 Si4056ADY-T1-GE3

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

MYR31.65

Add to Basket
Select or type quantity
Last RS stock
  • Final 4,820 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
10 - 40MYR3.165MYR31.65
50 - 90MYR2.93MYR29.30
100 - 240MYR2.712MYR27.12
250 - 990MYR2.51MYR25.10
1000 +MYR2.324MYR23.24

*price indicative

Packaging Options:
RS Stock No.:
228-2819
Mfr. Part No.:
Si4056ADY-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.3A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

29.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.2nC

Maximum Power Dissipation Pd

5W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.75mm

Automotive Standard

No

The Vishay TrenchFET Gen IV N-Channel power MOSFET is use for load switch, circuit protection and motor drive control.

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

Logic level gate drive

Related links