Vishay N-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC SI4840BDY-T1-GE3

RS Stock No.:: 165-2752
Mfr. Part No.:: SI4840BDY-T1-GE3
Manufacturer:: Vishay

Vishay N-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC SI4840BDY-T1-GE3

This image is representative of the product range

Subtotal (1 reel of 2500 units)**

MYR7,340.00

2500 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

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Units	Per Unit	Per Reel**
2500 +	MYR2.936	MYR7,340.00

**price indicative

RS Stock No.:: 165-2752
Mfr. Part No.:: SI4840BDY-T1-GE3
Manufacturer:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	10 A
Maximum Drain Source Voltage	40 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	9 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1.56 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	5mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Number of Elements per Chip	1
Width	4mm
Typical Gate Charge @ Vgs	18.5 nC @ 5 V
Height	1.55mm
Minimum Operating Temperature	-55 °C

Vishay N-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC SI4840BDY-T1-GE3

FREE delivery for orders over MYR500.00

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

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