Vishay TrenchFET Type N-Channel MOSFET, 10.9 A, 30 V Enhancement, 8-Pin SOIC SI4128DY-T1-GE3

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Subtotal (1 pack of 5 units)*

MYR14.68

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Being discontinued
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5 +MYR2.936MYR14.68

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Packaging Options:
RS Stock No.:
710-3311
Mfr. Part No.:
SI4128DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10.9A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.03Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

3.8nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

5W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21

Length

5mm

Height

1.5mm

Width

4 mm

Automotive Standard

No

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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