Vishay TrenchFET N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-8 SISA10DN-T1-GE3

RS Stock No.:: 165-7077
Mfr. Part No.:: SISA10DN-T1-GE3
Manufacturer:: Vishay

Vishay TrenchFET N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-8 SISA10DN-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 3000 units)**

MYR6,531.00

Temporarily out of stock - back order for despatch 28/07/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

Units	Per Unit	Per Reel**
3000 - 3000	MYR2.177	MYR6,531.00
6000 - 9000	MYR2.129	MYR6,387.00
12000 +	MYR2.09	MYR6,270.00

**price indicative

RS Stock No.:: 165-7077
Mfr. Part No.:: SISA10DN-T1-GE3
Manufacturer:: Vishay

SiSA10DN, N-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK 1212-8
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	5 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	39 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +20 V
Number of Elements per Chip	1
Width	3.4mm
Length	3.4mm
Typical Gate Charge @ Vgs	34 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	1.12mm

Vishay TrenchFET N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-8 SISA10DN-T1-GE3

FREE delivery for orders over MYR500.00

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

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