Vishay TrenchFET Type N-Channel MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

MYR35.67

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 23 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
10 - 90MYR3.567MYR35.67
100 +MYR3.459MYR34.59

*price indicative

Packaging Options:
RS Stock No.:
787-9409
Mfr. Part No.:
SISA10DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

34nC

Maximum Power Dissipation Pd

39W

Forward Voltage Vf

0.8V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.4mm

Height

1.12mm

Width

3.4 mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links