Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA04DN-T1-GE3

This image is representative of the product range

Subtotal (1 bag of 2 units)*

MYR11.68

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 27 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Bag*
2 +MYR5.84MYR11.68

*price indicative

Packaging Options:
RS Stock No.:
768-9307
Mfr. Part No.:
SISA04DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

52W

Forward Voltage Vf

0.73V

Typical Gate Charge Qg @ Vgs

51nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

3.15mm

Standards/Approvals

No

Width

3.15 mm

Height

1.12mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links