N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 Vishay SISA04DN-T1-GE3

RS Stock No.:: 768-9307
Mfr. Part No.:: SISA04DN-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 Vishay SISA04DN-T1-GE3

This image is representative of the product range

Price Each (In a Bag of 2)

MYR5.32

Temporarily out of stock - back order for despatch 28/12/2024, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Bag**
2 +	MYR5.32	MYR10.64

**price indicative

RS Stock No.:: 768-9307
Mfr. Part No.:: SISA04DN-T1-GE3
Manufacturer:: Vishay

SiSA04DN, N-Channel 30 V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	40 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK 1212
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	3.1 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	52 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +20 V
Width	3.15mm
Number of Elements per Chip	1
Length	3.15mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	51 nC @ 10 V
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.12mm

N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 Vishay SISA04DN-T1-GE3

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

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