Vishay TrenchFET N channel-Channel MOSFET, 85 A, 12 V Enhancement, 8-Pin PowerPAK 1212 SISF12EDN-T1-GE3
- RS Stock No.:
- 735-237
- Mfr. Part No.:
- SISF12EDN-T1-GE3
- Manufacturer:
- Vishay
N
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Subtotal (1 unit)*
MYR3.26
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- Shipping from 08 March 2027
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Units | Per Unit |
|---|---|
| 1 - 24 | MYR3.26 |
| 25 - 99 | MYR2.15 |
| 100 + | MYR1.11 |
*price indicative
- RS Stock No.:
- 735-237
- Mfr. Part No.:
- SISF12EDN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 85A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45.5nC | |
| Maximum Power Dissipation Pd | 69.4W | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 3.3mm | |
| Width | 3.3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 85A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45.5nC | ||
Maximum Power Dissipation Pd 69.4W | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Length 3.3mm | ||
Width 3.3 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
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