N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA00DP-T1-GE3

RS Stock No.:: 787-9367
Mfr. Part No.:: SIRA00DP-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA00DP-T1-GE3

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Price Each (In a Pack of 5)

MYR9.32

50 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Pack**
5 +	MYR9.32	MYR46.60

**price indicative

RS Stock No.:: 787-9367
Mfr. Part No.:: SIRA00DP-T1-GE3
Manufacturer:: Vishay

SiRA00DP, N-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK SO
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	1.35 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	104 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +20 V
Typical Gate Charge @ Vgs	147 nC @ 10 V
Length	6.25mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	5.26mm
Transistor Material	Si
Height	1.12mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA00DP-T1-GE3

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

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