Vishay P-Channel MOSFET, 3.8 A, 60 V, 8-Pin SOIC SI9407BDY-T1-GE3

RS Stock No.:: 165-6283
Mfr. Part No.:: SI9407BDY-T1-GE3
Manufacturer:: Vishay

Vishay P-Channel MOSFET, 3.8 A, 60 V, 8-Pin SOIC SI9407BDY-T1-GE3

This image is representative of the product range

Subtotal (1 reel of 2500 units)**

MYR7,350.00

Available for back order.*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

Units	Per Unit	Per Reel**
2500 +	MYR2.94	MYR7,350.00

**price indicative

RS Stock No.:: 165-6283
Mfr. Part No.:: SI9407BDY-T1-GE3
Manufacturer:: Vishay

Si9407BDY, P-Channel 60V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	3.8 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	150 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	14.5 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	5mm
Width	4mm
Number of Elements per Chip	1
Height	1.55mm
Minimum Operating Temperature	-55 °C

Vishay P-Channel MOSFET, 3.8 A, 60 V, 8-Pin SOIC SI9407BDY-T1-GE3

FREE delivery for orders over MYR500.00

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

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