Toshiba DTMOSIV Type N-Channel MOSFET, 11.5 A, 600 V Enhancement, 3-Pin TO-252 TK12P60W,RVQ(S

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Subtotal (1 pack of 5 units)*

MYR51.59

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Units
Per Unit
Per Pack*
5 - 495MYR10.318MYR51.59
500 - 995MYR10.098MYR50.49
1000 +MYR9.794MYR48.97

*price indicative

RS Stock No.:
799-5019
Mfr. Part No.:
TK12P60W,RVQ(S
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11.5A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

DTMOSIV

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

340mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.7V

Maximum Power Dissipation Pd

100W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

25nC

Maximum Operating Temperature

150°C

Height

2.3mm

Length

6.6mm

Width

6.1 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

MOSFET Transistors, Toshiba


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