Toshiba DTMOSIV N-Channel MOSFET, 5.8 A, 650 V Enhancement, 3-Pin TO-252 TK6P65W,RQ(S
- RS Stock No.:
- 133-2800
- Mfr. Part No.:
- TK6P65W,RQ(S
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
MYR46.69
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In Stock
- Plus 10 unit(s) shipping from 19 October 2026
- Plus 20 unit(s) shipping from 26 October 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | MYR4.669 | MYR46.69 |
| 50 - 90 | MYR4.341 | MYR43.41 |
| 100 - 490 | MYR3.937 | MYR39.37 |
| 500 - 990 | MYR3.597 | MYR35.97 |
| 1000 + | MYR3.31 | MYR33.10 |
*price indicative
- RS Stock No.:
- 133-2800
- Mfr. Part No.:
- TK6P65W,RQ(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | DTMOSIV | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.05Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 60W | |
| Forward Voltage Vf | 1.7V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1mm | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Height | 2.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series DTMOSIV | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.05Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 60W | ||
Forward Voltage Vf 1.7V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Maximum Operating Temperature 150°C | ||
Width 6.1mm | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Height 2.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
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