Toshiba 2SK4207 Type N-Channel MOSFET, 13 A, 900 V Enhancement, 3-Pin SC-65 2SK4207(Q)
- RS Stock No.:
- 756-0376
- Mfr. Part No.:
- 2SK4207(Q)
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
MYR22.12
FREE delivery for orders over RM 500.00
Temporarily out of stock
- 6 unit(s) shipping from 14 January 2026
- Plus 100 unit(s) shipping from 07 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 9 | MYR22.12 |
| 10 - 49 | MYR21.68 |
| 50 - 99 | MYR21.25 |
| 100 - 249 | MYR20.82 |
| 250 + | MYR20.41 |
*price indicative
- RS Stock No.:
- 756-0376
- Mfr. Part No.:
- 2SK4207(Q)
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | SC-65 | |
| Series | 2SK4207 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Forward Voltage Vf | -1.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.8mm | |
| Width | 20 mm | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type SC-65 | ||
Series 2SK4207 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Forward Voltage Vf -1.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Height 4.8mm | ||
Width 20 mm | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
Related links
- Toshiba Single 2SK 1 Type N-Channel MOSFET 900 V EnhancementS5Q(J
- Toshiba Single 2SK 1 Type N-Channel MOSFET 900 V EnhancementS5Q(J
- Toshiba GT40QR21(STA1D IGBT 3-Pin SC-65, Through Hole
- Toshiba TK Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-3PN
- Toshiba TK Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-3PN TK9J90E
- Toshiba Type N-Channel MOSFET 250 V EnhancementS4X(S
- Toshiba Type N-Channel MOSFET 200 V EnhancementS4X(S
- Toshiba 2SK Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-59 2SK1062(F)