Infineon HEXFET Type N-Channel MOSFET, 11 A, 100 V Enhancement, 5-Pin TO-220 IRFI4212H-117PXKMA1
- RS Stock No.:
- 258-3977
- Mfr. Part No.:
- IRFI4212H-117PXKMA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 tube of 50 units)*
MYR373.85
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- Plus 800 unit(s) shipping from 19 October 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | MYR7.477 | MYR373.85 |
| 100 - 100 | MYR6.728 | MYR336.40 |
| 150 + | MYR6.056 | MYR302.80 |
*price indicative
- RS Stock No.:
- 258-3977
- Mfr. Part No.:
- IRFI4212H-117PXKMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 72.50mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 72.50mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 100V Maximum Drain-Source Voltage, 11A Maximum Continuous Drain Current - IRFI4212H-117PXKMA1
This n‑channel MOSFET is a surface‑mount power transistor intended for switching and amplification in industrial electronic systems. It operates across a wide temperature range and conforms to RoHS environmental limits, making it suitable for installations requiring lead‑free components and broad thermal tolerance.
Features and Benefits:
• Low on‑resistance reduces conduction losses
• High‑voltage rating supports elevated supply rails
• Moderate gate charge enables Faster switching transitions
• Five‑terminal package simplifies mounting and connections
• Wide temperature capability maintains operation in extremes
• High‑voltage rating supports elevated supply rails
• Moderate gate charge enables Faster switching transitions
• Five‑terminal package simplifies mounting and connections
• Wide temperature capability maintains operation in extremes
Applications
• Suitable for power conversion modules in industrial equipment
• Ideal for motor‑drive switch stages requiring 11A current
• Used with high‑voltage switch configurations up to 100V
• Suitable for assemblies needing surface‑mount TO‑220 packaging
• Used for thermally stressed environments from -55°C to 150°C
• Ideal for motor‑drive switch stages requiring 11A current
• Used with high‑voltage switch configurations up to 100V
• Suitable for assemblies needing surface‑mount TO‑220 packaging
• Used for thermally stressed environments from -55°C to 150°C
What is the polarity of the channel?
It uses an N‑channel enhancement mode for electron conduction.
How does the gate‑drive demand affect switching?
The typical gate charge is 12 nC at the rated gate voltage, influencing driver sizing and switching speed.
What electrical stresses can the device withstand between drain and source?
It is rated to 100V between drain and source under the maximum specified conditions.
Which package and mounting method are provided?
It is supplied in a TO‑220 package designed for surface mounting.
What limiting characteristic defines conduction efficiency?
The maximum drain-source on‑resistance is 72.50mΩ, affecting conduction losses at high current.
Related links
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