Infineon HEXFET Type N-Channel MOSFET, 483 A, 100 V Enhancement TO-247 IRF100P218AKMA1
- RS Stock No.:
- 258-3950
- Mfr. Part No.:
- IRF100P218AKMA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 tube of 25 units)*
MYR641.25
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- 400 unit(s) shipping from 03 December 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 25 - 25 | MYR25.65 | MYR641.25 |
| 50 - 50 | MYR23.086 | MYR577.15 |
| 75 + | MYR20.778 | MYR519.45 |
*price indicative
- RS Stock No.:
- 258-3950
- Mfr. Part No.:
- IRF100P218AKMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 483A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 1.28mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 483A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 1.28mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 100V Maximum Drain‑Source Voltage, 483A Maximum Continuous Drain Current - IRF100P218AKMA1
This MOSFET is a high‑current N‑channel semiconductor device intended for power switching and conversion tasks. It operates across a wide temperature range suitable for demanding environments and is supplied in a TO‑247 package for surface mounting. The device uses enhancement‑mode conduction and meets RoHS requirements.
Features and Benefits:
• 1.28mΩ Rds(on) reduces conduction losses under heavy load
• 100V Vds enables medium‑voltage power applications
• 483A continuous current supports high‑current switching
• -55°C to +175°C range permits industrial temperature operation
• 1.2V forward voltage improves diode conduction efficiency
• 100V Vds enables medium‑voltage power applications
• 483A continuous current supports high‑current switching
• -55°C to +175°C range permits industrial temperature operation
• 1.2V forward voltage improves diode conduction efficiency
Applications
• Suitable for motor drive power stages
• Ideal for inverter output switching
• Used with high‑current power supply designs
• Can be used for DC-DC converters in industrial systems
• Suitable for high‑current test benches and load banks
• Ideal for inverter output switching
• Used with high‑current power supply designs
• Can be used for DC-DC converters in industrial systems
• Suitable for high‑current test benches and load banks
What mounting arrangement does it use?
It is supplied in a TO‑247 package designed for surface mounting.
Which conduction type does the device employ?
The transistor is an enhancement‑mode N‑type channel for controlled switching.
Is it compliant with common hazardous‑substance restrictions?
It carries RoHS approval indicating restricted substances are controlled.
What thermal extremes can it tolerate during operation?
The device is specified to function between -55°C and +175°C.
What is the typical forward voltage during body‑diode conduction?
The forward voltage is specified as 1.2V.
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