Infineon HEXFET Type N-Channel MOSFET, 224 A, 150 V Enhancement TO-247 IRF150P220AKMA1
- RS Stock No.:
- 258-3954
- Mfr. Part No.:
- IRF150P220AKMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 25 units)*
MYR710.00
FREE delivery for orders over RM 150.00
In Stock
- Plus 75 unit(s) shipping from 19 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 25 - 25 | MYR28.40 | MYR710.00 |
| 50 - 50 | MYR25.56 | MYR639.00 |
| 75 + | MYR23.005 | MYR575.13 |
*price indicative
- RS Stock No.:
- 258-3954
- Mfr. Part No.:
- IRF150P220AKMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 224A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 224A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 150V Drain-Source Voltage, 224A Continuous Drain Current - IRF150P220AKMA1
This MOSFET is a high‑power enhancement‑mode N‑channel transistor designed for demanding switching and power conversion roles. It operates across an extended temperature span and is packaged for surface mounting to support heat dissipation and robust handling in power assemblies. RoHS compliance indicates suitability for environments requiring restricted‑substance adherence.
Features and Benefits:
• Low on‑resistance reduces conduction losses and improves efficiency
• High continuous current capability supports heavy‑load switching
• 150V voltage rating enables high‑voltage power stages
• Wide temperature tolerance permits operation in extreme conditions
• Low forward voltage lowers power dissipation in diode conduction
• High continuous current capability supports heavy‑load switching
• 150V voltage rating enables high‑voltage power stages
• Wide temperature tolerance permits operation in extreme conditions
• Low forward voltage lowers power dissipation in diode conduction
Applications
• Suitable for motor drive inverter stages in industrial equipment
• Ideal for high‑current DC‑DC converters and power supplies
• Used with bridge topologies in electric traction systems
• Can be used for high‑power switching in renewable inverters
• Suitable for robust power modules requiring surface mounting
• Ideal for high‑current DC‑DC converters and power supplies
• Used with bridge topologies in electric traction systems
• Can be used for high‑power switching in renewable inverters
• Suitable for robust power modules requiring surface mounting
What is the devices package type and mounting orientation?
It is supplied in a TO-247 package configured for surface‑mount assembly.
How does thermal range affect deployment in harsh environments?
The rated operating range from -55°C to +175°C permits use where both low‑temperature start‑up and high‑temperature resilience are required.
What channel configuration and gate mode does it use?
It is an N‑channel device operating in enhancement mode, suitable for common low‑side and high‑side switch designs.
What electrical characteristics reduce switching losses during operation?
A maximum drain‑source resistance of 2.70mΩ and a forward diode voltage of 1.2V together reduce conduction and recovery losses under heavy currents.
Is the device compliant with restricted‑substance requirements?
Yes, it meets RoHS requirements for restricted materials.
Related links
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement TO-247 IRF150P220AKMA1
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement TO-247 IRF150P221AKMA1
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement TO-247 IRF100P218AKMA1
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 5-Pin TO-220 IRFI4212H-117PXKMA1
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-247 IRFP9140NPBF
- Infineon HEXFET 2 Type P 4.7 A 8-Pin SOIC
- Infineon HEXFET 2 Type P 4.7 A 8-Pin SOIC AUIRF7343QTR
