N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK SO-8L Vishay SQJA38EP-T1_GE3
- RS Stock No.:
- 188-5120
- Mfr. Part No.:
- SQJA38EP-T1_GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)**
MYR39.62
Temporarily out of stock - back order for despatch 03/01/2026, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
|---|---|---|
| 10 - 740 | MYR3.962 | MYR39.62 |
| 750 - 1490 | MYR3.764 | MYR37.64 |
| 1500 + | MYR3.575 | MYR35.75 |
**price indicative
- RS Stock No.:
- 188-5120
- Mfr. Part No.:
- SQJA38EP-T1_GE3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | PowerPAK SO-8L | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 6.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Minimum Gate Threshold Voltage | 1.4V | |
| Maximum Power Dissipation | 68 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 5mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Width | 4.47mm | |
| Typical Gate Charge @ Vgs | 48.2 nC @ 10 V | |
| Height | 1.01mm | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PowerPAK SO-8L | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 6.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 1.4V | ||
Maximum Power Dissipation 68 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 5mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Width 4.47mm | ||
Typical Gate Charge @ Vgs 48.2 nC @ 10 V | ||
Height 1.01mm | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
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