Vishay SQJB46EP_RC Type N-Channel MOSFET, 60 A, 40 V Enhancement, 4-Pin SO-8
- RS Stock No.:
- 210-5054
- Mfr. Part No.:
- SQJB46EP-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
MYR8,343.00
FREE delivery for orders over RM 500.00
Supply shortage
- 6,000 left, ready to ship from another location
Our current stock is limited and our suppliers are expecting shortages.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | MYR2.781 | MYR8,343.00 |
| 6000 - 9000 | MYR2.72 | MYR8,160.00 |
| 12000 + | MYR2.67 | MYR8,010.00 |
*price indicative
- RS Stock No.:
- 210-5054
- Mfr. Part No.:
- SQJB46EP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | SQJB46EP_RC | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 34W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.25 mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series SQJB46EP_RC | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 34W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 6.25 mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 5mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay MOSFET has PowerPAK SO-8L package type.
R-C values for the electrical circuit in the foster/tank and cauer/filter configurations are included
Related links
- Vishay SQJB46EP_RC Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8 SQJB46EP-T1_GE3
- Vishay SQJA38EP Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay SQJA38EP Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SQJA38EP-T1_GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SQJ208EP-T1_GE3
- Vishay SQJA66EP_RC Type N-Channel MOSFET 60 V Enhancement, 4-Pin SO-8
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- Vishay Dual SQJ264EP 2 Type N-Channel MOSFET 60 V Enhancement, 6-Pin SO-8