Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SiSS12DN-T1-GE3

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Subtotal (1 pack of 10 units)*

MYR45.77

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10 - 740MYR4.577MYR45.77
750 - 1490MYR4.349MYR43.49
1500 +MYR4.132MYR41.32

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Packaging Options:
RS Stock No.:
178-3920
Mfr. Part No.:
SiSS12DN-T1-GE3
Manufacturer:
Vishay Siliconix
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Brand

Vishay Siliconix

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

40V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

65.7W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

59nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Width

3.15 mm

Length

3.15mm

Height

1.07mm

Standards/Approvals

No

Automotive Standard

No

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® Gen IV power MOSFET

Very low RDS(on) in a compact and thermally enhanced package

Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

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