N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiSS12DN-T1-GE3

RS Stock No.:: 178-3920
Mfr. Part No.:: SiSS12DN-T1-GE3
Manufacturer:: Vishay Siliconix

N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiSS12DN-T1-GE3

Bulk discount available

Price Each (In a Pack of 10)

MYR4.577

14990 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR700.00

Units	Per Unit	Per Pack**
10 - 740	MYR4.577	MYR45.77
750 - 1490	MYR4.349	MYR43.49
1500 +	MYR4.132	MYR41.32

**price indicative

RS Stock No.:: 178-3920
Mfr. Part No.:: SiSS12DN-T1-GE3
Manufacturer:: Vishay Siliconix

Datasheet

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	60 A
Maximum Drain Source Voltage	40 V
Series	TrenchFET
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.1V
Minimum Gate Threshold Voltage	2.4V
Maximum Power Dissipation	65.7 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +20 V
Typical Gate Charge @ Vgs	59 nC @ 10 V
Length	3.15mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	3.15mm
Transistor Material	Si
Height	1.07mm
Forward Diode Voltage	1.1V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiSS12DN-T1-GE3

FREE delivery for orders over MYR700.00

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