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    Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual Vishay SQJ208EP-T1_GE3

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    Subtotal (1 reel of 3000 units)**

    MYR9,825.00

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    Per Reel**
    3000 - 3000MYR3.275MYR9,825.00
    6000 - 9000MYR3.203MYR9,609.00
    12000 +MYR3.144MYR9,432.00

    **price indicative

    RS Stock No.:
    188-4915
    Mfr. Part No.:
    SQJ208EP-T1_GE3
    Manufacturer:
    Vishay
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    Manufacturer

    Vishay

    Channel Type

    N

    Maximum Continuous Drain Current

    20 A, 60 A

    Maximum Drain Source Voltage

    40 (Channel 1) V, 40 (Channel 2) V

    Package Type

    PowerPAK SO-8L Dual

    Mounting Type

    Surface Mount

    Pin Count

    6

    Maximum Drain Source Resistance

    0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    2.3 (Channel 1) V, 2.4 (Channel 2) V

    Minimum Gate Threshold Voltage

    1.3 (Channel 1) V, 1.4 (Channel 2) V

    Maximum Power Dissipation

    27 W, 48 W

    Transistor Configuration

    Dual

    Maximum Gate Source Voltage

    ±20 V

    Length

    5mm

    Maximum Operating Temperature

    +175 °C

    Number of Elements per Chip

    2

    Width

    4.47mm

    Typical Gate Charge @ Vgs

    22 nC @ 10 V (Channel 1), 48.2 nC @ 10 V (Channel 2)

    Height

    1.01mm

    Minimum Operating Temperature

    -55 °C

    Automotive Standard

    AEC-Q101

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