Vishay Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual SQJ208EP-T1_GE3

RS Stock No.:: 188-5101
Mfr. Part No.:: SQJ208EP-T1_GE3
Manufacturer:: Vishay

Vishay Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual SQJ208EP-T1_GE3

Bulk discount available

Subtotal (1 pack of 10 units)**

MYR49.88

Temporarily out of stock - back order for despatch 23/02/2026, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

Units	Per Unit	Per Pack**
10 - 740	MYR4.988	MYR49.88
750 - 1490	MYR4.738	MYR47.38
1500 +	MYR4.501	MYR45.01

**price indicative

RS Stock No.:: 188-5101
Mfr. Part No.:: SQJ208EP-T1_GE3
Manufacturer:: Vishay

Datasheet SQJ208EP-T1_GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	20 A, 60 A
Maximum Drain Source Voltage	40 (Channel 1) V, 40 (Channel 2) V
Package Type	PowerPAK SO-8L Dual
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.3 (Channel 1) V, 2.4 (Channel 2) V
Minimum Gate Threshold Voltage	1.3 (Channel 1) V, 1.4 (Channel 2) V
Maximum Power Dissipation	27 W, 48 W
Transistor Configuration	Dual
Maximum Gate Source Voltage	±20 V
Typical Gate Charge @ Vgs	22 nC @ 10 V (Channel 1), 48.2 nC @ 10 V (Channel 2)
Number of Elements per Chip	2
Width	4.47mm
Maximum Operating Temperature	+175 °C
Length	5mm
Height	1.01mm
Automotive Standard	AEC-Q101
Minimum Operating Temperature	-55 °C

Vishay Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual SQJ208EP-T1_GE3

FREE delivery for orders over MYR500.00

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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