onsemi NTR3C21NZ Type N-Channel MOSFET, 3.6 A, 20 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 184-1066
- Mfr. Part No.:
- NTR3C21NZT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
MYR2,718.00
FREE delivery for orders over RM 500.00
In Stock
- 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | MYR0.906 | MYR2,718.00 |
| 6000 - 9000 | MYR0.892 | MYR2,676.00 |
| 12000 + | MYR0.875 | MYR2,625.00 |
*price indicative
- RS Stock No.:
- 184-1066
- Mfr. Part No.:
- NTR3C21NZT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | NTR3C21NZ | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 55mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 17.8nC | |
| Maximum Power Dissipation Pd | 470mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.01mm | |
| Length | 3.04mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series NTR3C21NZ | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 55mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 17.8nC | ||
Maximum Power Dissipation Pd 470mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.01mm | ||
Length 3.04mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Ultra Low RDS(on) in SOT−23 Package
Advanced Trench Technology
Improved System Efficiency
Applications:
Power Load Switch
Power Management
Related links
- onsemi NTR3C21NZ Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 NTR3C21NZT1G
- DiodesZetex DMP2035U Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- DiodesZetex DMP2035U Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 DMP2035U-7
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 IRLML0040TRPBF
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2300DS-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay Si2304DDS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2304DDS-T1-GE3