N-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Infineon IRLML0040TRPBF

RS Stock No.:: 913-4051
Mfr. Part No.:: IRLML0040TRPBF
Manufacturer:: Infineon

N-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Infineon IRLML0040TRPBF

Subtotal (1 reel of 3000 units)**

MYR1,995.00

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Units	Per Unit	Per Reel**
3000 +	MYR0.665	MYR1,995.00

**price indicative

RS Stock No.:: 913-4051
Mfr. Part No.:: IRLML0040TRPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 3.6A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML0040TRPBF

This power MOSFET is engineered for efficiency and reliability in a range of electronic circuits. With low on-resistance and high performance, it is suitable for applications that demand energy efficiency and robust operation. This component is notable for its ability to manage significant electrical loads, which makes it relevant for engineers and professionals in the automation and electronics sectors.

Features & Benefits

• Low RDS(on) of 56mΩ reduces switching losses
• Supports enhancement mode for efficient power control
• Maximum continuous drain current of 3.6A for steadfast operation
• Operates at a maximum drain-source voltage of 40V
• Designed for surface mount technology, perfect for compact designs
• Compatible with HEXFET technology for high performance

Applications

• Ideal for load and system switch
• Utilised in DC motor drive systems
• Effective for high-speed switching and amplifiers
• Suitable for surface mount in compact circuitry
• Employed in various power electronic circuits

What is the thermal resistance of this device?

The thermal resistance is typically 100°C/W, ensuring efficient heat dissipation during operation.

How does the gate threshold voltage impact device performance?

The gate threshold voltage ranges from 1.0 V to 2.5 V, providing flexibility in gate control across various applications.

Can it handle pulsed drain currents?

Yes, this component can endure pulsed drain currents that exceed its continuous rating, ensuring reliability in transient conditions.

What factors influence the maximum power dissipation of this component?

Power dissipation is mainly affected by ambient temperature and thermal resistance, which impact the junction temperature under load.

How does the MOSFET perform at high temperatures?

This device functions effectively within a temperature range of -55°C to +150°C, ensuring stability in challenging environments.

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MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	3.6 A
Maximum Drain Source Voltage	40 V
Package Type	SOT-23
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	56 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1.3 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Transistor Material	Si
Width	1.4mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	2.6 nC @ 4.5 V
Length	3.04mm
Number of Elements per Chip	1
Forward Diode Voltage	1.2V
Height	1.02mm
Minimum Operating Temperature	-55 °C